鍟嗘
鐢�(ch菐n)鍝�姹傝臣浼佹キ(y猫)璩囪▕鏈冨睍渚涙噳(y墨ng)
缍�(w菐ng)绔欏公鍔�鏈珯鏈嶅嫏(w霉)鐧�(f膩)甯冮噰璩�浼佹キ(y猫)寤虹珯鐧惧垎闆堕儴浠剁恫(w菐ng)渚涙眰鍟嗘渚涙噳(y墨ng)淇℃伅鍗婅嚜鍕曞お闄借兘闆绘睜杓夋祦瀛愮壒鎬у垎鏋愮郴绲�(t菕ng)鎵圭櫦(f膩)
2025-04-03
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澶櫧鑳介浕姹犺級娴佸瓙鐗规€у垎鏋愮郴绲�(t菕ng)
| 瑭崇窗瑾槑锛� | |||
|---|---|---|---|
杩戝勾渚�, 鏈夋鍗婂皫(d菐o)楂旀潗鏂欒垏鍣ㄤ欢闋�(l菒ng)鍩熺殑鐮旂┒鍜岄枊鐧�(f膩)鍙栧緱浜嗘棩鏂版湀鐣扮殑閫插睍锛屽叾涓湁姗熼浕鑷寸櫦(f膩)鍏変簩妤电銆佹湁姗熻杽鑶滄櫠楂旂銆佹湁姗熷お闄借兘闆绘睜銆佹湁姗熷瓨鍎插櫒銆佹湁姗熷偝鎰熷櫒銆佹湁姗熸縺鍏夊櫒绛夌浉闂�(gu膩n)鏈夋鍗婂皫(d菐o)楂旀潗鏂欒垏鍣ㄤ欢鐨勭爺绌跺彇寰椾簡澶ч噺鐨勭爺绌舵垚鏋�銆傞毃钁楁湁姗熷崐灏�(d菐o)楂旀潗鏂欒垏鍣ㄤ欢鐮旂┒鍜岄枊鐧�(f膩)鐨勬繁鍏�, 鏈夋鍗婂皫(d菐o)楂斾腑杓夋祦瀛愮殑鍌宠几鑳藉姏鏄奖闊挎湁姗熷崐灏�(d菐o)楂斿櫒浠舵€ц兘鐨勪竴鍊嬮噸瑕佺殑鍥犵礌銆傝 閲忔湁姗熷崐灏�(d菐o)楂旀潗鏂欒級娴佸瓙鍌宠几鑳藉姏鐨勪富瑕佸弮鏁�(sh霉)鏄級娴佸瓙閬风Щ鐜噓, 瀹冪洿鎺ュ弽鏄犱簡杓夋祦瀛愬湪闆诲牬浣滅敤涓嬬殑閬嬪嫊鑳藉姏, 鍥犳杓夋祦瀛愰伔绉荤巼鐨勬脯閲忔槸鏈夋鍗婂皫(d菐o)楂旀潗鏂欒垏鍣ㄤ欢鐮旂┒涓殑閲嶈鍏�(n猫i)瀹�銆� 鎴戝叕鍙告帹鍑烘湁姗熷お闄借兘闆绘睜OPV銆侀垼閳︾う澶櫧鑳介浕姹�銆丱LED鍣ㄤ欢鍜屽叾浠栨湁姗熷崐灏�(d菐o)楂斿櫒浠惰級娴佸瓙閬风Щ鐜囨脯閲忕郴绲�(t菕ng)銆� |
澶櫧鑳介浕姹犺級娴佸瓙鐗规€у垎鏋愮郴绲�(t菕ng)
? 涓昏鎳�(y墨ng)鐢細
* 鐒℃鍗婂皫(d菐o)楂斿厜闆诲櫒浠�锛屾湁姗熷崐灏�(d菐o)楂斿厜闆诲櫒浠�锛�
* 鏈夋澶櫧鑳介浕姹燨PV锛�
* 閳ｉ垿绀﹀お闄借兘闆绘睜Perovskite Solar Cell锛岄垼閳︾うLED锛�
* 鐒℃澶櫧鑳介浕姹狅紙渚嬪锛氬柈鏅剁銆佸鏅剁銆侀潪鏅剁绛夌鍩哄お闄借兘闆绘睜锛夛紱
* 鏌撴枡鏁忓寲澶櫧鑳介浕姹燚SSC锛�
? 涓昏娓噺鍔熻兘锛�
* 鍔熺巼榛濵PP銆丗F銆乂oc銆両sc銆乂S 鍏夊挤锛岄伔绉荤巼锛圛-V娓│ & I-V-L娓│锛岀┖闁撻浕鑽烽檺鍒堕浕娴丼CLC娉曪級
* 杓夋祦瀛愬瘑搴�锛岃級娴佸瓙鍕曞姏瀛�(xu茅)閬庣▼锛堢灛鎱�(t脿i)鍏夐浕娴佹硶 TPC锛�
* 杓夋祦瀛愬＝鍛�锛岃級娴佸瓙绗﹀悎鍕曞姏瀛�(xu茅)閬庣▼锛堢灛鎱�(t脿i)鍏夐浕澹�/鐬厠(t脿i)闁嬭矾闆诲娉� TPV锛�
* 杓夋祦瀛愰伔绉荤巼锛堟殫娉ㄥ叆鐬厠(t脿i)娉� DIT锛屽柈杓夋祦瀛愬櫒浠�&OLED锛�
* 涓茶伅(li谩n)闆婚樆锛屽咕浣曢浕瀹�锛孯C鏅傞枔锛堥浕澹撹剤娌栨硶 Pulse Voltage锛�
* 鍙冮洔瀵嗗害锛岄浕瀹圭巼锛屼覆鑱�(li谩n)闆婚樆锛岃級娴佸瓙閬风Щ鐜囷紙鏆楁厠(t脿i)绶氭€у鍔犺級娴佸瓙鐬厠(t脿i)娉� Dark-CELIV锛�
* 杓夋祦瀛愰伔绉荤巼锛岃級娴佸瓙瀵嗗害锛堝厜鐓х窔鎬у鍔犺級娴佸瓙鐬厠(t脿i)娉� Photo-CELIV锛�
* 杓夋祦瀛愬京(f霉)鍚堥亷绋�锛屾湕涔嬭惉鍑芥暩(sh霉)寰�(f霉)鍚堝墠鍥犲瓙锛堟檪闁撳欢閬茬窔鎬у鍔犺級娴佸瓙鐬厠(t脿i)娉� Delaytime-CELIV锛�
* 涓嶅悓宸ヤ綔榛炵殑杓夋祦瀛愬挤搴�锛岃級娴佸瓙閬风Щ鐜囷紙娉ㄥ叆绶氭€у鍔犺級娴佸瓙鐬厠(t脿i)娉� Injection-CELIV锛�
* 骞句綍闆诲锛岄浕瀹圭巼锛圡IS绶氭€у鍔犺級娴佸瓙鐬厠(t脿i)娉� MIS-CELIV锛�
* 闄烽槺寮峰急搴�锛岀瓑鏁堥浕璺紙闃绘姉璀滄脯瑭� IS锛�
* 閬风Щ鐜囷紝闄烽槺寮峰急搴�锛岄浕瀹�锛屼覆鑱�(li谩n)闆婚樆锛堥浕瀹筕S闋荤巼 C-f锛�
* 鍏�(n猫i)寤洪浕澹�锛屽弮闆滄績搴︼紝娉ㄥ叆鍕㈠锛屽咕浣曢浕瀹癸紙闆诲VS闆诲 C-V锛�
* 榛炰寒闆诲锛堥浕娴侀浕澹撶収搴︾壒鎬� I-V-L锛�
* 鐧�(f膩)鍏夊＝鍛�锛岃級娴佸瓙閬风Щ鐜囷紙鐬厠(t脿i)闆昏嚧鐧�(f膩)鍏夋硶 TEL锛�
-鏁村悎浜咲C锛孉C and Transient mode
鐢ㄤ簬澶櫧鑳介浕姹�/OLED鍣ㄤ欢杓夋祦瀛愮壒鎬ф脯閲忚垏鍒嗘瀽锛岄€氶亷灏嶅櫒浠剁殑璁婂厜寮稪-V鏇茬窔銆佺灛鎱�(t脿i)鍏夐浕娴佽瓬TPC锛岀灛鎱�(t脿i)鍏夐浕澹撹瓬TPV銆佺窔鎬у澹撹級娴佸瓙鎶藉彇Photo-CELIV銆佸挤搴﹁(di脿o)鍒跺厜闆绘祦璀淚MPS銆佸挤搴﹁(di脿o)鍒跺厜闆诲璀淚MVS銆侀樆鎶楄瓬IS銆侀浕瀹归浕澹撹瓬CV銆佹繁鑳界礆鐬厠(t脿i)璀淒LTS绛夐€茶娓噺鍒嗘瀽锛岃〃寰佸櫒浠剁殑杓夋祦瀛愰伔绉荤巼銆佽級娴佸瓙澹藉懡鍜屾績搴�銆佽級娴佸瓙鍕曞姏瀛�(xu茅)閬庣▼銆佹懟闆滃拰闄烽槺鍒嗗竷绛夋€ц兘鍙冩暩(sh霉)锛屽緸鑰屽皪澶櫧鑳介浕姹�/OLED鍣ㄤ欢鍜屽叾浠栨湁姗熷崐灏�(d菐o)楂斾腑鐨勮級娴佸瓙閬风Щ鐜囬€茶鏈夋晥鐨勫垎鏋愬拰娓噺銆�
娓噺鍙冩暩(sh霉)
• Charge carrier mobility杓夋祦瀛愰伔绉荤巼
• Carrier lifetime杓夋祦瀛愬＝鍛�
• Recombination efficiency寰�(f霉)鍚堟晥鐜�
• Charge injection barriers闆昏嵎娉ㄥ叆鍕㈠
• Geometric capacitance骞句綍闆诲
• J-V Curve闆绘祦-闆诲鏇茬窔
• J-V-L 闆绘祦-闆诲-浜害鏇茬窔
• Pmax銆丗F銆乂oc銆両sc VS鍏夊挤鏇茬窔
• Carrier lifetime杓夋祦瀛愬＝鍛�
• Trap density闄烽槺瀵嗗害
• Trap depth闄烽槺娣卞害
• Doping density鎽婚洔婵冨害
• Series resistance涓茶伅(li谩n)闆婚樆
• Electrical permittivity浠嬮浕甯告暩(sh霉)
• Built-in voltage鍏�(n猫i)寤洪浕鍫�
• Emitter lifetime (OLED)鐧�(f膩)灏勫＝鍛�
• 杌熶欢鍚庤檿鐞嗗姛鑳斤細鍙嵅寰楁洿璞愬瘜鐨勬脯瑭︽暩(sh霉)鎿�(j霉)
娓噺鏇茬窔锛�
鎶€琛�(sh霉)瑕�(gu墨)鏍�
• 閲囨ǎ鐜囷細60MS/s
• 鏅傞枔鍒嗚鲸鐜囷細16ns
• 闋荤巼鑼冨湇锛�10mHz to 10MHz
• 闆绘祦鍒嗚鲸鐜囷細锛�100pA
• LED涓婂崌鏅傞枔锛�100ns
• 闆绘祦鑼冨湇锛�100mA
• 闆诲鑼冨湇锛�±12V
鍙伕鍔熻兘
• Solar Cell Version or/锝乶d OLED Version
• Multi-LED妯″:360nm~1100nm for EQE
• 璁婃韩娓│鑷猴細-120 掳C to 150 掳C锛堝绋彲閬革級
• 鍏夎瓬鍎€锛歄LED鍣ㄤ欢鐧�(f膩)鍏夊厜璀滄脯閲�
• SMU 鎿村睍妯″: 闆诲±60V锛岄浕娴佸垎杈�1pA
鑱�(li谩n)绯绘垜鏅�锛岃珛瑾槑鏄湪鐧惧垎闆堕儴浠剁恫(w菐ng)涓婄湅鍒扮殑锛岃瑵璎�
瑭插晢瀹跺叾瀹冪敘(ch菐n)鍝�
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